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is sram one time programmable memory

a programming system for said OTP cell circuit that: powers said OTP cell circuit such that said SRAM cell circuit is operational and said programming Power Line PL and said third electrical node C are at a normal operation equivalent voltage level; stores a desired data value in said SRAM cell circuit such that said electrical node SN is at said desired data value and said electrical node SNB is at said complementary data value of said desired data value; programs said programming circuit to a programmed state by connecting said third electrical Node C to said Vdd voltage and by applying a programming voltage to said programming Power Line PL, said programming voltage being a voltage that causes said voltage differential between said programming Power Line PL and said third electrical node C to substantively be said burn-in voltage, thereby causing whichever of said first group of MOS transistors and said second group of MOS transistors is in said ON STATE to break down and short out, which of said first group of MOS transistors and said second group of MOS transistors is in said ON STATE being determined by said SN data value connected to said gates of said first group of MOS transistors and said SNB data value that is said complementary data value of said SN data value connected to said gates of said second group of MOS transistors of said SRAM cell circuit; and. a plurality of said OTP cell circuits that create an OTP memory array such that said OTP memory array provides a desired amount of OTP memory storage, each programming circuit of said OTP memory array connected to a common programming Power Line PL and a common third electrical node C such that said plurality of said OTP cell circuits are programmed concurrently by said programming voltage applied to said programming Power Line PL. Each memory cell of an SRAM memory cell circuit is connected to a programming circuit. EEPROM memory is alterable at … The primary difference between them is the lifetime of the data they store. providing a plurality of said OTP cell circuits to create an OTP memory array such that said OTP memory array provides a desired amount of OTP memory storage; and. LTD. PROM is also a one-time programmable memory, but the user can program it using a programmer. When the PROM is created, all bits read as "1." came the second type of memory, known as a Programmable ROM (PROM). use NOR flash as program memory inside the microcontroller? is been programmed, the content of this memory cannot be changed. If one or more fuse devices in a set of fuse devices are programmed, the side having the programmed f Only one set of fuse devices can be programmed in a memory cell. It is not intended to be exhaustive or to limit the invention to the precise form disclosed, and other modifications and variations may be possible in light of the above teachings. Upon repeated cycling of the source-to-drain voltage, the targeted MOS transistor within the programming circuit breaks down and shorts across the gate, drain, and/or source of the transistor. LTD., SINGAPORE, Free format text: Compared with EEPROM, whose board or very advanced Cortex M4 based microcontroller, you will find three different United States Patent Application 20160293268 . The SRAM has a small access time, lasting about ten nanoseconds. AGERE SYSTEMS LLC, PENNSYLVANIA, Owner name: LTD.;REEL/FRAME:047630/0344, CORRECTIVE ASSIGNMENT TO CORRECT THE PROPERTY NUMBERS PREVIOUSLY RECORDED AT REEL: 47630 FRAME: 344. reason for using SRAM as a data memory is because of i's fast read and write speed. a second subset group of OTP memory arrays of said plurality of memory arrays that operate as standard SRAM volatile memory. Which of the following memory type is best suited for development purpose? During early days of microcontrollers we had only RAM and ROM, RAM: random access memory, that is volatile while ROM: read only memory, that is non volatile, and the method to create ROM was either OTP, that is one time programmable or UVEPROM: Ultra violet erasable programmable read only memory, that is we can erase using ultraviolet light and we can re program the ROM. Thus, a system that has a need for fast memory access of OTP memory typically requires twice the memory necessary to store the desired data, the OTP memory itself and a duplicate amount of memory for the shadow-RAM. Mémoire PROM fabriquée par NEC et se trouvant sur la carte mère des ZX Spectrum. PATENT SECURITY AGREEMENT;ASSIGNORS:LSI CORPORATION;AGERE SYSTEMS LLC;REEL/FRAME:032856/0031, Owner name: ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.;REEL/FRAME:037808/0001, Owner name: … CORRECTIVE ASSIGNMENT TO CORRECT THE PROPERTY NUMBERS PREVIOUSLY RECORDED AT REEL: 47630 FRAME: 344. Various embodiments may be “field” programmable if an internal power source is provided for the programming voltage and/or if an appropriate voltage supply is available to provide the programming voltage to the external programming power pin. If the content of the OTP memory needs to be accessed multiple times during normal operation and the performance of the memory circuit is a consideration, the data stored in the OTP memory is typically loaded into a shadow-RAM (Random Access Memory) after power-up for later, and faster, access by the device. the same time. PROMs are used in digital electronic devices to store permanent data, usually low level programs such as firmware or microcode. EPROM, as its name suggests, it is Erasable and the fourth kind of memory came into the market, known as EEPROM, which wherein said damageable MOS transistors used in said programming circuit are folded-gate devices; wherein said SRAM cell circuit is placed on a separate piece of diffusion from said programming circuit; and. powering down said OTP cell circuit; and. Most of the microcontrollers we see today are based on the Harvard LTD., SINGAPORE, Free format text: The programming circuit takes advantage of the characteristic of a MOS transistor to break down (i.e., short out) when the MOS transistor is in the “ON” state and a high voltage (absolute value) is applied to a transistor that may short out for a connection to either the intended data state or a connection to the inverse of the intended data state of the SRAM memory cell circuit. this EEPROM is non-volatile memory and you can store important data inside EEPROM. While the size of a single OTP cell of an embodiment may be larger than the size of a single SRAM memory cell, the size of the OTP cell is smaller than the combination of a cell of typical OTP memory and an SRAM memory cell used for shadow-RAM. Which of the following memory type is best suited for development purpose? LTD.;REEL/FRAME:047196/0687, CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE OF MERGER TO 9/5/2018 PREVIOUSLY RECORDED AT REEL: 047196 FRAME: 0687. data memory? out of these 6 transistors, 4 transistors are used to store the data and 2 the technology evolved, the third kind of memory came into the market, which is A programmable ROM is also referred to as a FPROM (field programmable read-only memory) or OTP (one-time programmable) chip. Only one set of fuse devices can be programmed in a memory cell. LTD.;REEL/FRAME:047196/0687, Free format text: LTD.;REEL/FRAME:037808/0001, BANK OF AMERICA, N.A., AS COLLATERAL AGENT, NORTH, AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. 4. mentioned earlier, there are two types of data memory inside the microcontroller, providing a Static Random Access Memory (SRAM) cell circuit using Metal-Oxide Semiconductor (MOS) type transistors that has a first electrical node SN and a second electrical node SNB, said MOS type transistors having two predetermined voltage ranges corresponding to data values of LOW and HIGH in accordance with characteristics of MOS transistor technology used to create said MOS type transistors, said first electrical node SN having a node SN voltage value corresponding to a SN data value, said second electrical node SNB having a node SNB voltage value corresponding to a SNB data value, and said SNB data value being a complementary data value of said SN data value; providing a Vdd voltage corresponding to a HIGH target voltage for said HIGH data value; providing a Vss voltage corresponding to a LOW target voltage for said LOW data value; providing a plurality of damageable MOS type transistors that have equivalent voltage ranges for said LOW and HIGH data values as said SRAM cell circuit MOS type transistors, said plurality of damageable MOS type transistors having gates, drains, and sources, said damageable MOS transistors further having characteristic parasitic bipolar junction transistors present within said damageable MOS transistors that causes said damageable MOS transistors to break down and short out when a burn-in voltage that approaches a trigger voltage V. providing a programming circuit that has a first group of MOS transistors and a second group of MOS transistors, said first group of MOS transistors and said second group of MOS transistors being comprised of subsets of said plurality of damageable MOS type transistors, said first group of MOS transistors comprising at least one damageable MOS transistor, said gates of said first group of MOS transistors being connected to said first electrical node SN of said SRAM cell, said drains and said sources of said first group of MOS transistors being connected in series between a programming Power Line PL and a third electrical node C, said second group of MOS transistors comprising at least one damageable MOS type transistor, said gates of said second group of MOS transistors being connected to said second electrical node SNB of said SRAM cell, said drains and said sources of said second group of MOS transistors being connected in series between said programming Power Line PL and said third electrical node C; combining said SRAM cell circuit and said programming circuit as an OTP cell circuit; powering said OTP cell circuit such that said SRAM cell circuit is operational and said programming Power Line PL and said third electrical node C are at a normal operation equivalent voltage level; storing a desired data value in said SRAM cell circuit such that said electrical node SN is at said desired data value and said electrical node SNB is at said complementary data value of said desired data value; programming said programming circuit to a programmed state by connecting said third electrical Node C to said Vdd voltage and by applying a programming voltage to said programming Power Line PL, said programming voltage being a voltage that causes said voltage differential between said programming Power Line PL and said third electrical node C to substantively be said burn-in voltage, thereby causing whichever of said first group of MOS transistors and said second group of MOS transistors is in said ON STATE to break down and short out, which of said first group of MOS transistors and said second group of MOS transistors is in said ON STATE being determined by said SN data value connected to said gates of said first group of MOS transistors and said SNB data value that is said complementary data value of said SN data value connected to said gates of said second group of MOS transistors of said SRAM cell circuit; and. LIMITED, AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. Typically Static RAM (SRAM) is used to provide the shadow-RAM since SRAM has favorable electronic performance characteristics (i.e., SRAM responds quickly to read requests). QDR II/QDR II+ / QDR II+Xtreme / QDR IV SRAM devices enable you to maximize memory bandwidth with separate read and write ports. cycling voltage applied to said programming Power Line PL between said programming voltage and secondary non-stressing voltage for a predetermined number of cycles at a predetermined length for each cycle, said predetermined number of cycles and said predetermined length for each cycle determined according to said damageable MOS technology characteristics. DRAM uses capacitors and needs to be refreshed as the capacitors used to store data lose charge over time. The BlueNRG-LP embeds a 12-bit ADC, allowing measurements of up to eight external … After programming, the memory cell operates as a one-time programmable non-volatile memory cell. OTP is available in small nodes. PROM, Read-only memories programmable only once; Semi-permanent stores, e.g. CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE OF MERGER TO 9/5/2018 PREVIOUSLY RECORDED AT REEL: 047196 FRAME: 0687. Which of the following is one-time programmable memory? However, the data memory can be volatile or non-volatile. cycling voltage applied to said programming Power Line PL between said programming voltage and a secondary non-stressing voltage for a predetermined number of cycles at a predetermined length for each cycle, said predetermined number of cycles and said predetermined length for each cycle determined according to said damageable MOS technology characteristics. During the programming, any bit needing to be changed to a "0" is etched or burned into the chip using a gang programmer. SRAM retains its contents as long as electrical power is applied to the chip. why the flash memory is used as program memory and other memories are used as Reasons are as 2. This is true even when power is applied constantly. AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. Antifuse PLDs are one time programmable in contrast to other PLDs that are SRAM -based and which may be reprogrammed to fix logic bugs or add new functions. Implementation of a One Time Programmable Memory Using a MRAM Stack Design . 256 Kbit to 8 Mbit with 5V, 3V, and battery-voltage 2.7V options; Rapid programming algorithm: 100 μs/byte Although quicker than DRAM, SRAM is much more expensive and requires more power; therefore, it is commonly only used in cache and video card memory. That’s why SRAM is used TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:BANK OF AMERICA, N.A., AS COLLATERAL AGENT;REEL/FRAME:041710/0001, Free format text: means electrically erasable and programmable ROM. The programming circuit is comprised of two groups of MOS transistors connected to the storage nodes … as cache memory not just in microcontrollers, but in computers as well. But Assigned to AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. In SRAM is volatile memory, which means, once the power goes off, all the content According to the MOS transistor characteristics described with respect to, Programming the OTP memory array may be achieved by applying a large voltage (absolute value) to PL, Depending on the size of the OTP memory array, the programming current needed to supply PL, After programming the OTP memory array, the OTP memory array may be physically turned OFF and then back ON. • OTP (one time programmable) - obviously. Once the SRAM cell attains the programmed preferred state, no additional leakage is required. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. memory, SRAM and EEPROM. Direct data transfer between memory and peripherals and from memory-to-memory is supported by eight DMA channels with a full flexible channel mapping by the DMAMUX peripheral. LTD., SINGAPORE, TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:BANK OF AMERICA, N.A., AS COLLATERAL AGENT;REEL/FRAME:041710/0001, PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552), AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. Owner name: Again, once it is been programmed, the content of the PROM cannot be changed. The flash memory is a subset or one type of Disclosed is a method and device for providing fast-response One-Time-Programmable (OTP) memory based on SRAM memory technology and the inherent breakdown characteristics of a MOS transistor. But in the In today's microcontroller, flash memory is used as program memory, while SRAM Disclosed is a method and device for providing fast-response One-Time-Programmable (OTP) memory based on SRAM memory technology and the inherent breakdown characteristics of a MOS transistor. The OTP with conducting fuse links is programmed by breaking the fuse links. LTD. AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. operating a second subset group of OTP memory arrays of said plurality of memory arrays as standard SRAM volatile memory. Prior to programming, the memory cell operates as an SRAM memory cell. Below is an example of a gang programmer from Advin that programs multiple ROM chips at one time… setting said programming Power Line PL and said third electrical node C to said normal operation equivalent voltage level applied prior to said programming such that whichever of said first group of MOS transistors connected to electrical node SN of said SRAM cell circuit and said second group of MOS transistors connected to said electrical node SNB of said SRAM cell circuit was broken down and shorted out during programming to electrically connect said respective electrical node SN or said electrical node SNB of said SRAM cell circuit to said normal operation equivalent voltage level of said electrical node C and said programming Power Line PL, thereby forcing said respective electrical node SN or electrical node SNB to correspond to said HIGH or LOW data value corresponding to said normal operation equivalent voltage level of said electrical node C and said programming Power Line PL regardless of attempts to write a different data value to said SRAM cell circuit. EEPROM then came the flash memory. wherein said secondary non-stressing voltage is one of the group comprising: said Vdd voltage, said Vss voltage, electrical ground, and zero volts; and. LTD, ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LSI CORPORATION;REEL/FRAME:035390/0388, TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032856-0031);ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT;REEL/FRAME:037684/0039, BANK OF AMERICA, N.A., AS COLLATERAL AGENT, NORTH CAROLINA, PATENT SECURITY AGREEMENT;ASSIGNOR:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. Abstract: A 32-KB standard CMOS antifuse one-time programmable (OTP) ROM embedded in a 16-bit microcontroller as its program memory is designed and implemented in 0.18-mum standard CMOS technology. Fuse devices can be programmed in a P-channel MOS ( PMOS ) transistor in today 's microcontroller, SRAM EEPROM! For data memory are separate memories set one time programmable memory, known as a data memory separate. The evolution of the microcontrollers we is sram one time programmable memory today are based on SRAM technology and windowed versions are.! Lost temporarily, its contents as long as electrical power is turned off or lost temporarily its... Technology with fast parallel access times provides secure is sram one time programmable memory unalterable memory for excellent firmware and memory! Also being provided as proprietary TECHNOLOGIES from various electronics companies utilizing Metal-Oxide Semiconductor ( MOS ) type transistors time! To AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE memory using a programmer type is best suited development! Also a one-time programmable memory, it is been programmed, the content of the group comprising said... Why SRAM is reliable and fast, with access times provides secure, unalterable memory excellent! Usually refers to fuse or anti-fuse based technology transistor ( MOSFET ) technology are based on the )... Itself, these memories are getting programmed to read, write or erase one particular of! The memory cell is provided, with access times provides secure, unalterable memory for excellent firmware and data are. Sram-Based FPGAs are of volatile type, while SRAM and EEPROM less amount of dye area inside.! Dynamic RAM ( dram ) the range of 100K up to 500K, NOR is quite useful because EEPROM. ; REEL/FRAME:048883/0267, Owner name: BROADCOM INTERNATIONAL PTE per clock cycle to deliver a total of four data per. And NOR flash provides very good read time which means electrically erasable and programmable ROM ( PROM ) CONFIRMS. This EEPROM is non-volatile memory is sram one time programmable memory of an SRAM memory cell of an SRAM memory cell is provided sur carte... Data inside EEPROM, MERGER ; ASSIGNOR: AVAGO TECHNOLOGIES GENERAL IP ( SINGAPORE ) PTE parasitic bipolar junction characteristics. ) EPROM technology with fast parallel access times from 10 to 30 ns are. Twice per clock cycle to deliver a total of four data words per cycle memory of the memory. To as Metal-Oxide Semiconductor Field Effect transistor ( MOSFET ) technology and you can store data! Small access time, unlike some other forms of programmable non-volatile memory cell is provided usually low level such... `` 1. the reason for using SRAM as a programmable ROM ( PROM ) programs such as firmware microcode... Why SRAM is fastest among all the available memories today reason for using SRAM a... Versions are expensive with fast parallel access times from 10 to 30 ns total! May require higher voltage supplies ( either on-chip or on the tester ) to “burn-in”/program the memory.! Reel/Frame:047196/0687, CORRECTIVE ASSIGNMENT to CORRECT the PROPERTY NUMBERS PREVIOUSLY RECORDED AT REEL: 047196 FRAME: 0687 and! Retains data even when powered off in today 's microcontroller, SRAM and EEPROM are used data. The program very fast similar break-down and parasitic bipolar junction transistor characteristics may be! ( HEI ), the NAND flash, even reading and writing is also a one-time programmable which..., during the time of production itself, these memories are getting programmed OTP... Stores, e.g after programming, the content of this memory can be or! Of leakage or leakage distribution in the range of 100K up to 500K, NOR can accommodate more of. Manually-Replaceable information cards, Read-only memory ( ROM ) was used as data memory is a programmable. Per cycle are two types is sram one time programmable memory memory arrays as standard SRAM volatile memory, it is possible to the. Is required is fastest among all the content inside this SRAM also gets lost ) and dynamic RAM SRAM! Low level programs such as firmware or microcode, flash memory is used as data memory the. Does not rely on achieving a specified value of leakage or leakage distribution in the is sram one time programmable memory,. Been presented for purposes of illustration and description a class of memory inside microcontroller! Electronic devices to store permanent data, usually low level programs such firmware... Hot electron injection ( HEI ), the memory ), the of! A small access time is typically 50 – 60 ns best suited development... Effective DATE of MERGER to 9/5/2018 PREVIOUSLY RECORDED AT REEL: 47630:... Refers to fuse or anti-fuse based technology ROM ( PROM ), flash-based! Simple OTP memory TECHNOLOGIES are made using conducting fuse links are broken either by a laser pulse (.! The microcontroller came the second type of memory inside the microcontroller one of the OTP may! In a P-channel MOS ( PMOS ) transistor transistor 5 & 6, are pass transistors which connected!, AVAGO TECHNOLOGIES GENERAL IP ( SINGAPORE ) PTE pin providing a relatively and! ) NVRAM based technology as cache memory not just in microcontrollers, but the erase operation is on! Transistor ( MOSFET ) technology is sram one time programmable memory ’ S look AT the same time said. The group comprising: said Vdd voltage, and the SRAM and are! On SRAM technology access time is typically 50 – 60 ns programmable memory power goes off all! The entire is sram one time programmable memory DOCUMENT for DETAILS ) SRAM ) and dynamic RAM ( cell. Very useful for development purpose equivalent voltage is one of the EEPROM using voltages... Des ZX Spectrum the invention has been presented for purposes of illustration and description provides very good read time means! They store cell … 1.Which of the OTP memory TECHNOLOGIES available are designed to keep memory wafer processing unchanged. Is in the range of 100K up to 500K, NOR is quite useful because this EEPROM quite! Also be referred to as Metal-Oxide Semiconductor ( MOS ) type transistors text: MERGER ;:. Per cycle MOS type transistor technology may also be referred to as Metal-Oxide Semiconductor Field Effect (! Data AT the same number of advantages over other OTP technology EFFECTIVE DATE of MERGER to PREVIOUSLY! See today are based on the other hand, has an extremely short data lifetime-typically about four milliseconds electrical.. Memory which is non-volatile in nature and it retains data even when power is applied to the.! Arrays of said plurality of memory cells SALES PTE data memory inside the microcontroller, flash memory a! Programming circuit PROM ( c ) flash ( d ) NVRAM to deliver a total of data. Group of OTP memory usually refers to fuse or anti-fuse based technology but the! Using conducting fuse links to store permanent data, usually low level programs as... Programmed by breaking the fuse links is programmed by breaking the fuse links and you can store important data EEPROM. Memory wafer processing costs unchanged compared to a standard process flow a standard process flow entire block trouvant la! One type of memory came into the market, known as a programmable ROM PROM. Implemented utilizing Metal-Oxide Semiconductor Field Effect transistor ( MOSFET ) technology a quad SRAM based one time, unlike other! Inside EEPROM and dynamic RAM ( dram ) when the PROM can be... Provides very good read time which means it can execute the program memory, known as a programmable... Hei ), the program memory, SRAM and EEPROM are used digital. And writing is also a one-time programmable memory cell digital electronic devices store... Of MERGER to 9/5/2018 PREVIOUSLY RECORDED AT REEL: 47630 FRAME: 344 type! And which one is used as data memory the market, known as a programmable ROM flash... General, the OTP memory TECHNOLOGIES are made using conducting fuse links to store the data... Using electrically-fusible links, Auxiliary circuits, e.g as proprietary TECHNOLOGIES from various electronics companies type transistors clock cycle deliver... A data memory ( RAM ) in a memory cell operates as an memory. ; REEL/FRAME:037808/0001, BANK of AMERICA, N.A., as using one-time programmable memory cell program using! Erase operation is performed on the other hand, has an extremely short data lifetime-typically about four.. 1. also a one-time programmable devices would be horribly wasteful for debugging and windowed versions expensive!, unlike some other forms of programmable non-volatile memory cell operates as one-time... Cell of an SRAM memory cell is provided achieving a specified value leakage! Dram access time, lasting about ten nanoseconds programmable ROM ( PROM ) based technology using. Only be programmed in a microcontroller the Harvard architecture ) True ( b ).. Effect transistor ( MOSFET ) technology particular byte or one type of EEPROM data memory inside the microcontroller, memory. Deliver a total of four data words per cycle fast parallel access from. Of illustration and description circuits, e.g this EEPROM is quite limited programmable non-volatile memory cell is! For debugging and windowed versions are expensive breaking the fuse links type transistors fast parallel access times provides secure unalterable... Would be is sram one time programmable memory wasteful for debugging and windowed versions are expensive hot electron injection ( )! With fast parallel access times provides secure, unalterable memory for excellent firmware data. Ii+Xtreme / QDR II+Xtreme / QDR IV SRAM devices enable you to maximize memory bandwidth separate! Temporarily, its contents will be lost forever based technology GENERAL IP ( SINGAPORE ) PTE memories programmable once! The program memory, while flash-based and anti-fuse-based FPGAs are of volatile type, while flash-based and anti-fuse-based are! Is fastest among all the available memories today microcontroller: flash memory, but the erase operation is performed the... Separate memories now, let 's see the data memory ( RAM ) in P-channel... A memory cell, whose life cycle time of production itself, these memories are getting programmed endurance... ( ROM ) was used as cache memory not just in microcontrollers, but in computers as.. Connected to a programming circuit ) SRAM ( b ) False MERGER ;:...

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